D882 Y(160-320)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors D882 TRANSISTOR (NPN) TO-126 FEATURES Power Dissipation 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 3 A Collector Power Dissipation PC 1.25 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ Ta=25 ℃ unless otherwise specified) ELECTRICAL CHARACTERISTICS ( Symbol Parameter 3. BASE Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC = 100μA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC = 10mA, IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE= 100μA, IC=0 5 V Collector cut-off current ICBO VCB= 40 V, IE=0 1 µA Collector cut-off current ICEO VCE= 30 V, IB=0 10 µA Emitter cut-off current IEBO VEB= 6 V, IC=0 1 µA DC current gain hFE VCE= 2 V, IC= 1A 60 Collector-emitter saturation voltage VCE (sat) IC= 2A, IB= 0.2 A 0.5 V Base-emitter saturation voltage VBE (sat) IC= 2A, IB= 0.2 A 1.5 V Transition frequency fT VCE= 5V, IC=0.1A 400 90 f =10MHz MHz CLASSIFICATION OF hFE Rank R O Y GR Range 60-120 100-200 160-320 200-400 B,Mar,2012 D882 Typical Characteristics IC 2.5 VCE —— COMMON EMITTER Ta=25 ℃ 10mA 9mA IC Ta=100℃ 7mA DC CURRENT GAIN (A) —— hFE 8mA 2.0 IC COLLECTOR CURRENT hFE 1000 6mA 1.5 5mA 4mA 1.0 3mA Ta=25℃ 100 2mA 0.5 COMMON EMITTER VCE= 2V IB=1mA 0.0 10 0 1 2 3 4 5 6 COLLECTOR-EMITTER VOLTAGE COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) —— 8 9 10 100 1000 COLLECTOR CURRENT IC VBEsat —— 2000 100 Ta=100 ℃ 10 1 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) VCEsat 1000 7 VCE (V) Ta=25℃ IC IC 1000 Ta=25℃ Ta=100 ℃ β=10 1 β=10 100 1 10 100 COLLECTOR CURREMT IC 3000 —— 1000 IC 1 3000 10 100 COLLECTOR CURREMT (mA) Cob/Cib VBE —— 1000 IC VCB/VEB 500 f=1MHz IE=0/IC=0 Cib (pF) (mA) Ta=25 ℃ 100 CAPACITANCE 100 T= a 25 ℃ T= a 10 0℃ C IC COLLECTOR CURRENT 3000 (mA) 1000 10 COMMON EMITTER VCE= 2V 1 0 300 600 900 1200 BASE-EMMITER VOLTAGE VBE (mV) PC 1400 COLLECTOR POWER DISSIPATION PC (mW) 3000 (mA) —— Cob 10 0.1 1 REVERSE VOLTAGE V (V) 10 20 Ta 1200 1000 800 600 400 200 0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 (℃ ) 150 B,Mar,2012